EPITAXIAL DEPOSITION OF SILICON IN DEEP GROOVES

被引：28

作者：

SMELTZER, RK ^{[1
]}

机构：

[1] TEXAS INSTR INC,SEMICOND RES & DEV LABS,DALLAS,TX 75222

来源：

关键词：

D O I：

10.1149/1.2134106

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1666 / 1671

页数：6

共 9 条

[1]

ALEXANDER EG, 1966, T METALL SOC AIME, V236, P284

[2]

BENZING WC, 1971, MAY EL SOC M WASH

[3]

HUNT LP, 1972, J ELCHEM SO, V119, P1941

[4] ETCHING VERY NARROW GROOVES IN SILICON [J].

KENDALL, DL .

[5] EPITAXIAL-GROWTH OF SILICON FROM DICHLOROSILANE [J].

LEKHOLM, A .

[6] SELECTIVE GROWTH OF EPITAXIAL SILICON AND GALLIUM ARSENIDE [J].

RAICHOUDHURY, P ;

SCHRODER, DK .

[7] SELECTIVE SILICON EPITAXY AND ORIENTATION DEPENDENCE OF GROWTH [J].

RAICHOUDHURY, P ;

SCHRODER, DK .

RUNYAN, WR ;

ALEXANDER, EG ;

CRAIG, SE .

[9]

SMELTZER RK, 1973, 10TH C REC IEEE PHOT, P194