ELECTRON-BEAM LITHOGRAPHIC FABRICATION OF ULTRA-SUBMICRON GATE GAAS-MESFETS

[1] BARKER JR, 1981, SOLID STATE ELECTRON, V28, P519

[2] CHOU SY, IN PRESS

[3] GORONKIN H, 1985, GAAS TECHNOLOGY

[4] GRUBIN HL, 1981, P INT ELECTRON DEVIC, P633

[5] CHARACTERISTICS OF JUNCTION FIELD EFFECT DEVICES WITH SMALL CHANNEL LENGTH-TO-WIDTH RATIOS [J]. SOLID-STATE ELECTRONICS, 1967, 10 (06) : 577 - &

[6] VERY SHORT GATE-LENGTH GAAS-MESFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (09) : 471 - 472

[7] REICH RK, 1982, ELECTRON DEVIC LETT, V3, P381, DOI 10.1109/EDL.1982.25607

[8] SWARTZ RG, 1982, P INT ELECTRON DEVIC, P642

[9] 1983, 6940B5 HEWL PACK PRO

[1] BARKER JR, 1981, SOLID STATE ELECTRON, V28, P519

[2] CHOU SY, IN PRESS

[3] GORONKIN H, 1985, GAAS TECHNOLOGY

[4] GRUBIN HL, 1981, P INT ELECTRON DEVIC, P633

[5] CHARACTERISTICS OF JUNCTION FIELD EFFECT DEVICES WITH SMALL CHANNEL LENGTH-TO-WIDTH RATIOS [J]. SOLID-STATE ELECTRONICS, 1967, 10 (06) : 577 - &

[6] VERY SHORT GATE-LENGTH GAAS-MESFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (09) : 471 - 472

[7] REICH RK, 1982, ELECTRON DEVIC LETT, V3, P381, DOI 10.1109/EDL.1982.25607

[8] SWARTZ RG, 1982, P INT ELECTRON DEVIC, P642

[9] 1983, 6940B5 HEWL PACK PRO