ELECTRON MOBILITIES AND HIGH-FIELD DRIFT VELOCITIES IN STRAINED SILICON ON SILICON GERMANIUM SUBSTRATES

被引：14

作者：

VOGELSANG, T ^{[1
]}

HOFMANN, KR ^{[1
]}

机构：

[1] SIEMENS AG,CORP RES & DEV,W-8000 MUNICH 83,GERMANY

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1992年 / 39卷 / 11期

关键词：

D O I：

10.1109/16.163490

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

[No abstract available]

引用

页码：2641 / 2642

页数：2

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