EVIDENCE FOR FACETS WITH (210) AZIMUTH IN MOLECULAR-BEAM EPITAXIAL-GROWTH ON PATTERNED GAAS(001) SUBSTRATES

被引：3

作者：

BENISTY, H

BOCKENHOFF, E

TALNEAU, A

机构：

[1] Laboratoire Central de Recherches, Thomson-CSF, F-91404 Orsay, Domaine de Corbeville

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 16期

关键词：

D O I：

10.1063/1.107120

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present clear experimental evidence that using axes different from the <110> mirror axes of the (001) GaAs surface generally used for lateral patterning and regrowth of nanostructures yield much better faceted morphologies in molecular-beam epitaxy (MBE) at such scales. Growth on [210] and [120BAR] oriented gratings is shown to yield almost perfect (21n) facets (n almost-equal-to 6). A novel directed one-dimensional growth instability is clearly revealed. The microscopic structure of these facets is discussed as well as implications for the growth of quantum wires and dots in the (In,Ga,Al)As system.

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页码：1987 / 1989

页数：3

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