SELECTIVE GROWTH AND OPTICAL-PROPERTIES OF AN ALGAAS LAYER ON V-GROOVED SI SUBSTRATES

被引:5
作者
HASHIMOTO, A
FUKUNAGA, T
WATANABE, N
机构
关键词
D O I
10.1063/1.343657
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:5536 / 5541
页数:6
相关论文
共 11 条
[1]  
AKIYAMA M, 1984, J CRYST GROWTH, V68, P21, DOI 10.1016/0022-0248(84)90391-9
[2]  
FISHER R, 1985, APPL PHYS LETT, V47, P983
[3]   GAAS GROWTH-PROPERTIES ON V-GROOVED SI SUBSTRATES [J].
HASHIMOTO, A ;
FUKUNAGA, T ;
WATANABE, N .
APPLIED PHYSICS LETTERS, 1989, 54 (11) :998-1000
[4]   ALGAAS HETEROJUNCTION VISIBLE (700 NM) LIGHT-EMITTING-DIODES ON SI SUBSTRATES FABRICATED BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
HASHIMOTO, A ;
KAWARADA, Y ;
KAMIJOH, T ;
AKIYAMA, M ;
WATANABE, N ;
SAKUTA, M .
APPLIED PHYSICS LETTERS, 1986, 48 (23) :1617-1619
[5]   EPITAXIALLY INDUCED STRESS IN GAAS LAYER ON V-GROOVED SI AND GAAS SUBSTRATES [J].
HASHIMOTO, A ;
KAMIJOH, T ;
WATANABE, N .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (07) :L1128-L1130
[6]   SELECTIVE EMBEDDED GROWTH OF ALXGA1-XAS BY LOW-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].
KAMON, K ;
TAKAGISHI, S ;
MORI, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (01) :L10-L12
[7]   SELECTIVE EPITAXIAL-GROWTH OF GAAS BY LOW-PRESSURE MOVPE [J].
KAMON, K ;
TAKAGISHI, S ;
MORI, H .
JOURNAL OF CRYSTAL GROWTH, 1985, 73 (01) :73-76
[8]  
Kawabe M., 1987, JPN J APPL PHYS, V26, P944
[9]   EFFECTS OF MISFIT DISLOCATIONS AND THERMALLY INDUCED STRAIN ON THE FILM PROPERTIES OF HETEROEPITAXIAL GAAS ON SI [J].
LUM, RM ;
KLINGERT, JK ;
BYLSMA, RB ;
GLASS, AM ;
MACRANDER, AT ;
HARRIS, TD ;
LAMONT, MG .
JOURNAL OF APPLIED PHYSICS, 1988, 64 (12) :6727-6732
[10]   RAMAN-SCATTERING SPECTRA IN MIXED GA1-XALXAS(SB) CRYSTALS [J].
TALWAR, DN ;
VANDEVYVER, M ;
ZIGONE, M .
PHYSICAL REVIEW B, 1981, 23 (04) :1743-1752