ALGAAS HETEROJUNCTION VISIBLE (700 NM) LIGHT-EMITTING-DIODES ON SI SUBSTRATES FABRICATED BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：17

作者：

HASHIMOTO, A

KAWARADA, Y

KAMIJOH, T

AKIYAMA, M

WATANABE, N

SAKUTA, M

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 23期

关键词：

D O I：

10.1063/1.96835

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1617 / 1619

页数：3

相关论文

共 16 条

[1] GROWTH OF SINGLE DOMAIN GAAS LAYER ON (100)-ORIENTED SI SUBSTRATE BY MOCVD
AKIYAMA, M
KAWARADA, Y
KAMINISHI, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (11): : L843 - L845
[2] AKIYAMA M, 1984, J CRYST GROWTH, V68, P21, DOI 10.1016/0022-0248(84)90391-9
[3] VARIATION OF MINORITY-CARRIER DIFFUSION LENGTH WITH CARRIER CONCENTRATION IN GAAS LIQUID-PHASE EPITAXIAL LAYERS
CASEY, HC
MILLER, BI
PINKAS, E
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) : 1281 - 1287
[4] GAAS-MESFETS FABRICATED ON MONOLITHIC GAAS/SI SUBSTRATES
CHOI, HK
TSAUR, BY
METZE, GM
TURNER, GW
FAN, JCC
[J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (06) : 207 - 208
[5] MONOLITHIC INTEGRATION OF GAAS/ALGAAS MODULATION-DOPED FIELD-EFFECT TRANSISTORS AND N-METAL-OXIDE-SEMICONDUCTOR SILICON CIRCUITS
FISCHER, R
HENDERSON, T
KLEM, J
KOPP, W
PENG, CK
MORKOC, H
DETRY, J
BLACKSTONE, SC
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (09) : 983 - 985
[6] GAAS BIPOLAR-TRANSISTORS GROWN ON (100) SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY
FISCHER, R
CHAND, N
KOPP, W
MORKOC, H
ERICKSON, LP
YOUNGMAN, R
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (04) : 397 - 399
[7] GAAS LIGHT-EMITTING-DIODES FABRICATED ON GE-COATED SI SUBSTRATES
FLETCHER, RM
WAGNER, DK
BALLANTYNE, JM
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (10) : 967 - 969
[8] GAAS SHALLOW-HOMOJUNCTION SOLAR-CELLS ON GE-COATED SI SUBSTRATES
GALE, RP
FAN, JCC
TSAUR, BY
TURNER, GW
DAVIS, FM
[J]. ELECTRON DEVICE LETTERS, 1981, 2 (07): : 169 - 171
[9] DOPING DEPENDENCE OF HOLE LIFETIME IN TYPE GAAS
HWANG, CJ
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) : 4408 - &
[10] INOMATA H, 1985, 12TH INT S GALL ARS