IMPROVEMENTS OF ELECTRICAL AND OPTICAL-PROPERTIES OF INALAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：9

作者：

KAWAMURA, Y

NAKASHIMA, K

ASAHI, H

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 08期

关键词：

D O I：

10.1063/1.335785

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3262 / 3264

页数：3

共 18 条

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[2]

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[6] INGAAS/INGAALAS/INALAS/INP SCH-MQW LASER-DIODES GROWN BY MOLECULAR-BEAM EPITAXY [J].

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[7] DISORDERING BY ZN-DIFFUSION OF INGAAS/INALAS MQW SUPERLATTICE STRUCTURE GROWN BY MBE [J].

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[8]

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[9] GALNAS-ALLNAS STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J].

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[10] COMPOSITIONAL DEPENDENCE OF BAND-GAP ENERGY AND CONDUCTION-BAND EFFECTIVE MASS OF IN1-X-YGAXALY AS LATTICE MATCHED TO INP [J].

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