STABILITY OF AN ATOMICALLY CLEAN HG1-XCDXTE SURFACE IN VACUUM AND UNDER O-2 EXPOSURE

被引：9

作者：

MORGEN, P ^{[1
]}

SILBERMAN, J ^{[1
]}

LANDAU, I ^{[1
]}

SPICER, WE ^{[1
]}

WILSON, JA ^{[1
]}

机构：

[1] SANTA BARBARA RES CTR,GOLETA,CA 93017

来源：

JOURNAL OF CRYSTAL GROWTH | 1982年 / 56卷 / 02期

关键词：

D O I：

10.1016/0022-0248(82)90470-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：493 / 497

页数：5

共 18 条

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[5]

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[6]

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LINDAU, I ;

SPICER, WE .

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[8]

LONG D, 1970, SEMICONDUCTORS SEMIM, V5

[9] LONG-TERM STABILITY OF CDXHG1-XTE AT 300-K [J].

MICKLETHWAITE, WFH ;

REDDEN, RF .

APPLIED PHYSICS LETTERS, 1980, 36 (05) :379-380

[10] LONG-TERM HALL-TYPE CONVERSION BY VACANCY DIFFUSION IN HG1-XCDX TE AT ROOM-TEMPERATURE [J].

NIMTZ, G ;

SCHLICHT, B ;

DORNHAUS, R .

APPLIED PHYSICS LETTERS, 1979, 34 (08) :490-491

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