VOLTAGE TEMPERATURE MEMORY AND PRESSURE VOLTAGE MEMORY EFFECTS IN COEVAPORATED FILMS OF SIO-TIO

被引:9
作者
HOGARTH, CA
ILYAS, M
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D O I
10.1016/0040-6090(83)90443-1
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T [工业技术];
学科分类号
08 ;
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页码:267 / 274
页数:8
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共 13 条
[1]   ELECTRON-EMISSION AND RELATED PROPERTIES OF AMORPHOUS THIN-FILMS OF MIXED BARIUM AND SILICON OXIDES [J].
ABIDI, A ;
HOGARTH, CA .
THIN SOLID FILMS, 1974, 22 (02) :203-214
[2]   STUDY OF DC ELECTRICAL PROPERTIES OF THIN-FILMS OF CO-EVAPORATED DIELECTRIC SYSTEM SIO-TIO [J].
BIDADI, H ;
HOGARTH, CA .
THIN SOLID FILMS, 1975, 27 (02) :319-327
[3]   SOME ELECTRICAL PROPERTIES OF THIN-FILM COPPER-BOROSILICATE GLASS-COPPER SANDWICHES INTENDED FOR USE AS ELECTRON EMITTERS [J].
BIDADI, H ;
HOGARTH, CA .
INTERNATIONAL JOURNAL OF ELECTRONICS, 1974, 36 (03) :287-299
[4]   ELECTRICAL PHENOMENA IN AMORPHOUS OXIDE FILMS [J].
DEARNALEY, G ;
STONEHAM, AM ;
MORGAN, DV .
REPORTS ON PROGRESS IN PHYSICS, 1970, 33 (11) :1129-+
[5]  
Dearnaley G., 1970, Journal of Non-Crystalline Solids, V4, P593, DOI 10.1016/0022-3093(70)90097-9
[6]   Pressure Dependent Switching in Al-Al2O3-Au Structures [J].
Emmer, I. .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1970, 3 (03) :K191-K193
[7]   CONDUCTING FILAMENTS AND VOLTAGE-CONTROLLED NEGATIVE-RESISTANCE IN AL-AL2-O3-AU STRUCTURES WITH AMORPHOUS DIELECTRIC [J].
EMMER, I .
THIN SOLID FILMS, 1974, 20 (01) :43-52
[8]   LOW-TEMPERATURE CONDUCTION AND BREAKDOWN PHENOMENA IN AU-SIO-CHI-AU THIN-FILM SANDWICH STRUCTURES [J].
GOULD, RD ;
HOGARTH, CA .
INTERNATIONAL JOURNAL OF ELECTRONICS, 1975, 38 (05) :577-591
[9]   LOW-FREQUENCY NEGATIVE RESISTANCE IN THIN ANODIC OXIDE FILMS [J].
HICKMOTT, TW .
JOURNAL OF APPLIED PHYSICS, 1962, 33 (09) :2669-&
[10]   TEMPERATURE EFFECTS OF CONDUCTIVITY IN THIN-FILMS OF THE CO-EVAPORATED DIELECTRIC SYSTEM SIO-GEO2 [J].
HOGARTH, CA ;
RAHMAN, ASMS .
THIN SOLID FILMS, 1982, 87 (02) :L3-L5