PROGRAMMABLE TEST SYSTEM FOR TRANSIENT ANNEALING CHARACTERIZATION OF IRRADIATED MOSFETS

被引：9

作者：

TAUSCH, HJ

WEMHONER, R

PEASE, RL

SCHWANK, JR

MAIER, RJ

机构：

[1] MISSION RES CORP,ALBUQUERQUE,NM 87106

[2] SANDIA NATL LABS,DIV 2144,ALBUQUERQUE,NM 87185

[3] USAF,WEAPONS LAB,NTCTR,KIRTLAND AFB,NM 87117

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1987年 / 34卷 / 06期

关键词：

D O I：

10.1109/TNS.1987.4337551

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1763 / 1768

页数：6

共 5 条

[1]

GALLOWAY KF, 1984, IEEE T NUC SCI, V31

[2]

MCWHORTER PJ, 1986, APPL PHYS LETT, V48, P13

[3] PHYSICAL-MECHANISMS CONTRIBUTING TO DEVICE REBOUND [J].

SCHWANK, JR ;

WINOKUR, PS ;

MCWHORTER, PJ ;

SEXTON, FW ;

DRESSENDORFER, PV ;

TURPIN, DC .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1434-1438

[4] CORRELATION OF RADIATION EFFECTS IN TRANSISTORS AND INTEGRATED-CIRCUITS [J].

SEXTON, FW ;

SCHWANK, JR .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) :3975-3981

[5] CORRELATING THE RADIATION RESPONSE OF MOS CAPACITORS AND TRANSISTORS [J].

WINOKUR, PS ;

SCHWANK, JR ;

MCWHORTER, PJ ;

DRESSENDORFER, PV ;

TURPIN, DC .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1453-1460

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