CRYSTALLINE PROPERTIES OF BP EPITAXIALLY GROWN ON SI SUBSTRATES USING B2H6-PH3-H2 SYSTEM

被引：15

作者：

HIRAI, Y ^{[1
]}

SHOHNO, K ^{[1
]}

机构：

[1] SOPHIA UNIV,FAC SCI & TECHNOL,CHIYODA KU,TOKYO 102,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1977年 / 41卷 / 01期

关键词：

D O I：

10.1016/0022-0248(77)90105-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：124 / 132

页数：9

共 10 条

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[7] EPITAXIAL-GROWTH OF BP COMPOUNDS ON SI SUBSTRATES USING B2H6-PH3-H2 SYSTEM [J].

SHOHNO, K ;

TAKIGAWA, M ;

NAKADA, T .

JOURNAL OF CRYSTAL GROWTH, 1974, 24 (OCT) :193-196

[8] BORON MONOPHOSPHIDE AND SOME OF ITS ELECTRICAL PROPERTIES [J].

TAKENAKA, T ;

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SHOHNO, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (04) :579-580

[9] HETEROEPITAXIAL GROWTH OF BORON MONOPHOSPHIDE ON SILICON SUBSTRATE USING B2H6-PH3-H2 SYSTEM [J].

TAKIGAWA, M ;

HIRAYAMA, M ;

SHOHNO, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (03) :411-416

[10]

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