INSB N-CHANNEL ENHANCEMENT MODE MISFET GROWN BY MOLECULAR-BEAM EPITAXY

被引：1

作者：

ASHLEY, T

DEAN, AB

ELLIOTT, CT

MCCONVILLE, CF

WHITEHOUSE, CR

机构：

来源：

ELECTRONICS LETTERS | 1989年 / 25卷 / 04期

关键词：

D O I：

10.1049/el:19890201

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：289 / 290

页数：2

共 7 条

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[5]

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[6]

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