CHARACTERISTICS OF P-GE/N-GAAS HETEROJUNCTIONS GROWN BY MOLECULAR-BEAM EPITAXY

被引：4

作者：

UNLU, MS ^{[1
]}

STRITE, S ^{[1
]}

WON, T ^{[1
]}

ADOMI, K ^{[1
]}

CHEN, J ^{[1
]}

MOHAMMAD, SN ^{[1
]}

BISWAS, D ^{[1
]}

MORKOC, H ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

ELECTRONICS LETTERS | 1989年 / 25卷 / 20期

关键词：

Molecular Beam Epitaxy - Semiconducting Gallium Arsenide--Growth;

D O I：

10.1049/el:19890908

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the nearly ideal electrical characteristics p-Ge/N-GaAs heterojunction diodes grown by molecular beam epitaxy. The temperature and device size dependencies of the current-voltage characteristics have been investigated. At room temperature, unity ideality factor has been demonstrated over almost six decades of current.

引用

页码：1359 / 1360

页数：2

共 7 条

[1] SURFACE PROCESSES CONTROLLING MBE HETEROJUNCTION FORMATION - GAAS(100)/GE INTERFACES [J].