QUANTUM-CONFINED STARK-EFFECT IN INGAAS/INP MULTIPLE QUANTUM-WELLS GROWN BY SOLID SOURCE MOLECULAR-BEAM EPITAXY

被引：3

作者：

CLAXTON, PA ^{[1
]}

HOPKINSON, M ^{[1
]}

KOVAC, J ^{[1
]}

HILL, G ^{[1
]}

PATE, MA ^{[1
]}

DAVID, JPR ^{[1
]}

机构：

[1] SLOVAK UNIV TECHNOL BRATISLAVA, DEPT MICROELECTR, CS-81219 BRATISLAVA, CZECHOSLOVAKIA

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 111卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)91137-Y

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report the first observation of the quantum-confined Stark effect (QCSE) in In0.53Ga0.47As/InP multiple quantum wells (MQWs) grown by solid source molecular beam epitaxy (SSMBE). MQW PIN diodes have been fabricated with reverse bias leakage currents of almost-equal-to 10 nA at - 35 V, for 400-mu-m diameter mesas. Room temperature photocurrent measurements on diodes with nominal 55 angstrom well show well resolved excitonic absorption at around 1.55-mu-m and exhibit shifts of up to 39 meV at - 35 V.

引用

页码：1080 / 1083

页数：4

共 10 条

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