EFFECT OF OXIDE THICKNESS ON THE PROPERTIES OF METAL-INSULATOR-ORGANIC SEMICONDUCTOR PHOTOVOLTAIC CELLS

被引：6

作者：

NEVIN, WA

CHAMBERLAIN, GA

机构：

[1] TRENT POLYTECH,DEPT ELECT & ELECTR ENGN,NOTTINGHAM NG1 4BU,ENGLAND

[2] SHELL RES LTD,THORNTON RES CTR,CHESTER CH1 3SH,CHESHIRE,ENGLAND

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 01期

关键词：

D O I：

10.1109/16.249427

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The dependence of the dark and photovoltaic characteristics of metal-insulator-semiconductor (MIS) devices of the structure Al/Al-oxide/TPP/Au (TPP = tetraphenylporphyrin) on the thickness of the interfacial oxide layer is described. Iodine-doped MgTPP devices show a variation of open-circuit photovoltage, short-circuit photocurrent, fill factor, power conversion efficiency, and capacitance with Al-oxide thickness, in a manner similar to inorganic MIS structures. An optimum oxide thickness of around 2 nm is observed for highest photovoltaic efficiency. The properties of oxygen/water vapor-doped ZnTPP and H2TPP cells appear dependent upon the extent of oxide growth on the aluminum electrode during the doping process.

引用

页码：75 / 81

页数：7

共 49 条

[11] PHOTOVOLTAIC PROPERTIES OF MIXED MONOLAYERS OF CHLOROPHYLL A AND CAROTENOID CANTHAXANTHIN [J].