LATERAL DIFFUSION OF ARSENIC IN LOW-PRESSURE CHEMICAL VAPOR-DEPOSITED POLYCRYSTALLINE SILICON

被引：4

作者：

LEWIS, N

GILDENBLAT, G

GHEZZO, M

KATZ, W

SMITH, GA

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 02期

关键词：

D O I：

10.1063/1.93863

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：171 / 172

页数：2

共 7 条

[1] GRAIN-BOUNDARIES IN P-N-JUNCTION DIODES FABRICATED IN LASER-RECRYSTALLIZED SILICON THIN-FILMS [J].

JOHNSON, NM ;

BIEGELSEN, DK ;

MOYER, MD .

APPLIED PHYSICS LETTERS, 1981, 38 (11) :900-902

[2]

LIFSHIN E, 1966, GE66C250 RES LAB REP

[3]

OHZONE T, 1980, IEEE J SOLID STATE C, V15, P856

[4] ARSENIC-IMPLANTED POLYSILICON LAYERS [J].

RYSSEL, H ;

IBERL, H ;

BLEIER, M ;

PRINKE, G ;

HABERGER, K ;

KRANZ, H .

APPLIED PHYSICS, 1981, 24 (03) :197-200

[5] DIFFUSION OF ARSENIC IN POLYCRYSTALLINE SILICON [J].

SWAMINATHAN, B ;

SARASWAT, KC ;

DUTTON, RW ;

KAMINS, TI .

APPLIED PHYSICS LETTERS, 1982, 40 (09) :795-798

[6] ARSENIC IMPLANTATION INTO POLYCRYSTALLINE SILICON AND DIFFUSION TO SILICON SUBSTRATE [J].

TSUKAMOTO, K ;

AKASAKA, Y ;

HORIE, K .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (05) :1815-1821

[7]

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