ANISOTROPIC DRIFT MOBILITY IN HYDROGENATED AMORPHOUS-SILICON

[1] COHEN JD, 1984, SEMICONDUCT SEMIMET, V21, P9

[2] TRANSIENT PHOTOCURRENT SATURATION AND DEEP TRAPPING IN HYDROGENATED AMORPHOUS-SILICON [J]. SOLID STATE COMMUNICATIONS, 1986, 60 (03) : 291 - 294

[3] INTRINSIC STRESS MEASUREMENTS AS A QUANTITATIVE MEASURE OF THE GROWTH-MORPHOLOGY TRANSITION IN A-SI-H [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1984, 66 (1-2) : 87 - 92

[4] MACKENZIE KD, IN PRESS J NONCRYST

[5] Mott N.F., 1987, CONDUCTION NONCRYSTA

[6] PARKER MA, IN PRESS J NONCRYST

[7] PARKER MJ, UNPUB

[8] ANOMALOUS TRANSIT-TIME DISPERSION IN AMORPHOUS SOLIDS [J]. PHYSICAL REVIEW B, 1975, 12 (06): : 2455 - 2477

[9] MOBILITY LIFETIME ESTIMATES IN AMORPHOUS HYDROGENATED SILICON (A-SI-H) [J]. PHILOSOPHICAL MAGAZINE LETTERS, 1987, 55 (02) : 87 - 92

[10] STAFFORD BL, 1987, AIP C P, V157

[1] COHEN JD, 1984, SEMICONDUCT SEMIMET, V21, P9

[2] TRANSIENT PHOTOCURRENT SATURATION AND DEEP TRAPPING IN HYDROGENATED AMORPHOUS-SILICON [J]. SOLID STATE COMMUNICATIONS, 1986, 60 (03) : 291 - 294

[3] INTRINSIC STRESS MEASUREMENTS AS A QUANTITATIVE MEASURE OF THE GROWTH-MORPHOLOGY TRANSITION IN A-SI-H [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1984, 66 (1-2) : 87 - 92

[4] MACKENZIE KD, IN PRESS J NONCRYST

[5] Mott N.F., 1987, CONDUCTION NONCRYSTA

[6] PARKER MA, IN PRESS J NONCRYST

[7] PARKER MJ, UNPUB

[8] ANOMALOUS TRANSIT-TIME DISPERSION IN AMORPHOUS SOLIDS [J]. PHYSICAL REVIEW B, 1975, 12 (06): : 2455 - 2477

[9] MOBILITY LIFETIME ESTIMATES IN AMORPHOUS HYDROGENATED SILICON (A-SI-H) [J]. PHILOSOPHICAL MAGAZINE LETTERS, 1987, 55 (02) : 87 - 92

[10] STAFFORD BL, 1987, AIP C P, V157