MOBILITY LIFETIME ESTIMATES IN AMORPHOUS HYDROGENATED SILICON (A-SI-H)

[1] TRANSIENT PHOTOCURRENT SATURATION AND DEEP TRAPPING IN HYDROGENATED AMORPHOUS-SILICON [J]. SOLID STATE COMMUNICATIONS, 1986, 60 (03) : 291 - 294

[2] ON THE INTENSITY DEPENDENCE OF THE PHOTOCONDUCTIVITY IN A-SI-H [J]. SOLID STATE COMMUNICATIONS, 1983, 47 (02) : 107 - 110

[3] FRITZSCHE H, 1984, SEMICONDUCT SEMIMET, V21, P309

[4] STUDY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON BY TRANSIENT AND STEADY-STATE PHOTOCONDUCTIVITY MEASUREMENTS [J]. PHYSICAL REVIEW B, 1983, 27 (12): : 7460 - 7465

[5] TRANSIENT-PHOTOCURRENT STUDIES IN A-SI-H [J]. PHYSICAL REVIEW B, 1984, 29 (02): : 826 - 835

[6] TRAPPING AND RECOMBINATION KINETICS IN A-SI-H THIN-FILMS [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 643 - 646

[7] COMPARATIVE-STUDY OF TIME-RESOLVED CONDUCTIVITY MEASUREMENTS IN HYDROGENATED AMORPHOUS-SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (06) : 2236 - 2241

[8] THE ENERGY OF THE DANGLING-BOND STATES IN A-SI [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1986, 53 (01): : L1 - L7

[9] TRANSIENT-PHOTOCURRENT STUDY OF LOCALIZED STATES AT THE CONDUCTION-BAND EDGE OF A-SI-H [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1985, 52 (04): : 857 - 867

[10] RECOMBINATION PROCESSES AND OPTICAL BIAS IN UNDOPED A-SI-H [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 623 - 626

[1] TRANSIENT PHOTOCURRENT SATURATION AND DEEP TRAPPING IN HYDROGENATED AMORPHOUS-SILICON [J]. SOLID STATE COMMUNICATIONS, 1986, 60 (03) : 291 - 294

[2] ON THE INTENSITY DEPENDENCE OF THE PHOTOCONDUCTIVITY IN A-SI-H [J]. SOLID STATE COMMUNICATIONS, 1983, 47 (02) : 107 - 110

[3] FRITZSCHE H, 1984, SEMICONDUCT SEMIMET, V21, P309

[4] STUDY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON BY TRANSIENT AND STEADY-STATE PHOTOCONDUCTIVITY MEASUREMENTS [J]. PHYSICAL REVIEW B, 1983, 27 (12): : 7460 - 7465

[5] TRANSIENT-PHOTOCURRENT STUDIES IN A-SI-H [J]. PHYSICAL REVIEW B, 1984, 29 (02): : 826 - 835

[6] TRAPPING AND RECOMBINATION KINETICS IN A-SI-H THIN-FILMS [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 643 - 646

[7] COMPARATIVE-STUDY OF TIME-RESOLVED CONDUCTIVITY MEASUREMENTS IN HYDROGENATED AMORPHOUS-SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (06) : 2236 - 2241

[8] THE ENERGY OF THE DANGLING-BOND STATES IN A-SI [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1986, 53 (01): : L1 - L7

[9] TRANSIENT-PHOTOCURRENT STUDY OF LOCALIZED STATES AT THE CONDUCTION-BAND EDGE OF A-SI-H [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1985, 52 (04): : 857 - 867

[10] RECOMBINATION PROCESSES AND OPTICAL BIAS IN UNDOPED A-SI-H [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 623 - 626