学术探索
学术期刊
新闻热点
数据分析
智能评审

INDIUM DISTRIBUTION IN INGAAS QUANTUM WIRES OBSERVED WITH THE SCANNING TUNNELING MICROSCOPE

被引：54
作者：
PFISTER, M
JOHNSON, MB
ALVARADO, SF
SALEMINK, HWM
MARTI, U
MARTIN, D
MORIERGENOUD, F
REINHART, FK
机构：
[1] ECOLE POLYTECH FED LAUSANNE, INST MICRO & OPTOELECTR, CH-1015 LAUSANNE, SWITZERLAND
[2] EPFL, IMO DP, CH-1015 LAUSANNE, SWITZERLAND
来源：
APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 10期
关键词：
D O I：
10.1063/1.114494
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The incorporation of In in the growth of crescent-shaped In0.12Ga0.88As quantum wires embedded in (AlAs)(4)(GaAs)(8) superlattice barriers is studied in atomic detail using cross-sectional scanning tunneling microscopy. It is found that the In distribution in both the surface and the first subsurface layer can be atomically resolved in the empty- and filled-state images, respectively. Strong In segregation is seen at the InGaAs/GaAs interfaces, but neither an expected enhancement of the In concentration at the center of the quantum wire compared to the planar quantum well nor In clustering beyond the statistical expectation is observed. (C) 1995 American Institute of Physics.
引用
收藏
页码：1459 / 1461
页数：3
相关论文
共 8 条
[1]   ATOM-SELECTIVE IMAGING OF THE GAAS(110) SURFACE [J].
FEENSTRA, RM ;
STROSCIO, JA ;
TERSOFF, J ;
FEIN, AP .
PHYSICAL REVIEW LETTERS, 1987, 58 (12) :1192-1195
[2]  
Kapon E., 1993, Optoelectronics - Devices and Technologies, V8, P429
[3]   FABRICATION OF BURIED GAALAS NM-STRUCTURES BY DEEP UV HOLOGRAPHIC LITHOGRAPHY AND MBE GROWTH ON FINELY CHANNELED SUBSTRATES [J].
MARTI, U ;
PROCTOR, M ;
MARTIN, D ;
MORIERGENOUD, F ;
SENIOR, B ;
REINHART, FK .
MICROELECTRONIC ENGINEERING, 1991, 13 (1-4) :391-394
[4]   EXPERIMENTAL-EVIDENCE OF DIFFERENCE IN SURFACE AND BULK COMPOSITIONS OF ALXGA1-XAS, ALXIN1-XAS AND GAXIN1-XAS EPITAXIAL LAYERS GROWN BY MOLECULAR-BEAM EPITAXY [J].
MASSIES, J ;
TURCO, F ;
SALETES, A ;
CONTOUR, JP .
JOURNAL OF CRYSTAL GROWTH, 1987, 80 (02) :307-314
[5]   ATOMIC-STRUCTURE AND LUMINESCENCE EXCITATION OF GAAS/(ALAS)N(GAAS)M QUANTUM WIRES WITH THE SCANNING TUNNELING MICROSCOPE [J].
PFISTER, M ;
JOHNSON, MB ;
ALVARADO, SF ;
SALEMINK, HWM ;
MARTI, U ;
MARTIN, D ;
MORIERGENOUD, F ;
REINHART, FK .
APPLIED PHYSICS LETTERS, 1994, 65 (09) :1168-1170
[6]  
PFISTER M, UNPUB
[7]   ATOMIC-SCALE COMPOSITION FLUCTUATIONS IN III-V SEMICONDUCTOR ALLOYS [J].
SALEMINK, HWM ;
ALBREKTSEN, O .
PHYSICAL REVIEW B, 1993, 47 (23) :16044-16047
[8]   INTERFACE SEGREGATION AND CLUSTERING IN STRAINED-LAYER INGAAS/GAAS HETEROSTRUCTURES STUDIES BY CROSS-SECTIONAL SCANNING-TUNNELING-MICROSCOPY [J].
ZHENG, JF ;
WALKER, JD ;
SALMERON, MB ;
WEBER, ER .
PHYSICAL REVIEW LETTERS, 1994, 72 (15) :2414-2417
1