CRITERIA FOR BASIC ASSUMPTIONS IN KICK-OUT MECHANISM OF DIFFUSION

被引：8

作者：

KITAGAWA, H ^{[1
]}

HASHIMOTO, K ^{[1
]}

YOSHIDA, M ^{[1
]}

机构：

[1] KYUSHU INST DESIGN,MINAMI KU,FUKUOKA 815,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 11期

关键词：

D O I：

10.1143/JJAP.20.2033

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2033 / 2036

页数：4

共 13 条

[1] PROPERTIES OF GOLD-DOPED SILICON [J].

COLLINS, CB ;

CARLSON, RO ;

GALLAGHER, CJ .

PHYSICAL REVIEW, 1957, 105 (04) :1168-1173

[2]

DAMASK AC, 1963, POINT DEFECTS METALS, P81

[3] GOLD-INDUCED CLIMB OF DISLOCATIONS IN SILICON [J].

DASH, WC .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (12) :2275-2283

[4]

GOESELE U, 1980, APPL PHYS, V23, P361

[5] DIFFUSION OF GOLD IN SEMI-INFINITE SINGLE-CRYSTALS OF SILICON [J].

HUNTLEY, FA ;

WILLOUGHBY, AF .

PHILOSOPHICAL MAGAZINE, 1973, 28 (06) :1319-1340

[6]

KITAGAWA H, UNPUB JPN J APPL PHY

[7]

Ono K., 1976, Journal of Science of the Hiroshima University, Series A (Physics and Chemistry), V40, P195

[8]

SEEGER A, 1977, I PHYS C SERIES, V31, P12

[9] DIFFUSION OF GOLD INTO SILICON CRYSTALS [J].

SPROKEL, GJ ;

FAIRFIELD, JM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (2P1) :200-+

[10] MECHANISM OF GOLD DIFFUSION INTO SILICON [J].

WILCOX, WR ;

LACHAPELLE, TJ .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (01) :240-&

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