CONDUCTION IN NON-CRYSTALLINE SYSTEMS .11. ON-STATE OF THRESHOLD SWITCH

[31] NONMETAL TO METAL TRANSITION IN AMORPHOUS-GE AND GE-SN ALLOYS UNDER HIGH-PRESSURE [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1974, 36 (02) : 558 - 564

[32] van Roosbroeck W., 1973, Journal of Non-Crystalline Solids, V12, P232, DOI 10.1016/0022-3093(73)90072-0

[33] METALLIZED ELECTRON-HOLE DROPLETS IN STRAINED SI AND GE [J]. PHYSICAL REVIEW LETTERS, 1973, 30 (25) : 1248 - 1251

[34] AMORPHOUS-SEMICONDUCTOR THRESHOLD ON-STATE PROPERTIES AS FUNCTIONS OF DECAY TIME, AMBIENT-TEMPERATURE, AND POLARITY [J]. APPLIED PHYSICS LETTERS, 1975, 26 (05) : 234 - 237

[35] RADIATION EMISSION DURING ON STATE IN A NONCRYSTALLINE CHALCOGENIDE THRESHOLD SWITCH [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (10) : 4534 - 4538

[36] [No title captured]

[31] NONMETAL TO METAL TRANSITION IN AMORPHOUS-GE AND GE-SN ALLOYS UNDER HIGH-PRESSURE [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1974, 36 (02) : 558 - 564

[32] van Roosbroeck W., 1973, Journal of Non-Crystalline Solids, V12, P232, DOI 10.1016/0022-3093(73)90072-0

[33] METALLIZED ELECTRON-HOLE DROPLETS IN STRAINED SI AND GE [J]. PHYSICAL REVIEW LETTERS, 1973, 30 (25) : 1248 - 1251

[34] AMORPHOUS-SEMICONDUCTOR THRESHOLD ON-STATE PROPERTIES AS FUNCTIONS OF DECAY TIME, AMBIENT-TEMPERATURE, AND POLARITY [J]. APPLIED PHYSICS LETTERS, 1975, 26 (05) : 234 - 237

[35] RADIATION EMISSION DURING ON STATE IN A NONCRYSTALLINE CHALCOGENIDE THRESHOLD SWITCH [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (10) : 4534 - 4538

[36] [No title captured]