A SIMPLE REGIONAL-ANALYSIS OF TRANSIT TIMES IN BIPOLAR-TRANSISTORS

被引:74
作者
VANDENBIESEN, JJH
机构
关键词
D O I
10.1016/0038-1101(86)90074-2
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:529 / 534
页数:6
相关论文
共 20 条
[1]  
de Graaff H. C., 1977, Solid-State Electronics, V20, P515, DOI 10.1016/S0038-1101(77)81008-3
[2]   P-N-I-P AND N-P-I-N JUNCTION TRANSISTOR TRIODES [J].
EARLY, JM .
BELL SYSTEM TECHNICAL JOURNAL, 1954, 33 (03) :517-533
[3]   AN ANALYTIC MODEL FOR MINORITY-CARRIER TRANSPORT IN HEAVILY DOPED REGIONS OF SILICON DEVICES [J].
FOSSUM, JG ;
SHIBIB, MA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (09) :1018-1025
[4]  
GETREU IE, 1978, MODELING BIPOLAR TRA
[5]  
HART PAH, 1981, HDB SEMICONDUCTORS, V4
[7]   EFFECT OF EMITTER DOPING GRADIENT ON FT IN MICROWAVE BIPOLAR-TRANSISTORS [J].
KERR, JA ;
BERZ, F .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (01) :15-20
[8]  
KIRK CT, 1962, IRE T ELECTRON DEV, V9, P164
[10]  
LINDMAYER J, 1965, FUNDAMENTALS SEMICON, P174