EFFECT OF EMITTER DOPING GRADIENT ON FT IN MICROWAVE BIPOLAR-TRANSISTORS

被引：15

作者：

KERR, JA

BERZ, F

机构：

[1] MULLARD HAZEL GROVE LTD,STOCKPORT,CHESHIRE,ENGLAND

[2] MULLARD RES LABS,REDHILL,SURREY,ENGLAND

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1975年 / ED22卷 / 01期

关键词：

D O I：

10.1109/T-ED.1975.18064

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：15 / 20

页数：6

共 20 条

[1] DESIGN AND PERFORMANCE OF SMALL-SIGNAL MICROWAVE TRANSISTORS [J].

ARCHER, JA .

SOLID-STATE ELECTRONICS, 1972, 15 (03) :249-&

[2] IMPROVED MICROWAVE-TRANSISTOR STRUCTURE [J].

ARCHER, JA .

ELECTRONICS LETTERS, 1972, 8 (20) :499-&

[3]

BEALE JRA, TO BE PUBLISHED

[4]

BERZ F, TO BE PUBLISHED

[5] INFLUENCE OF HEAVY DOPING EFFECTS ON FT PREDICTION OF TRANSISTORS [J].

DEMAN, H ;

MERTENS, R ;

VANOVERS.R .

ELECTRONICS LETTERS, 1973, 9 (8-9) :174-176

[6]

DEMAN H, 1973, IEEE DEVICE, VED20, P772

[7]

FAIR RB, 1973, IEEE DEVICE, VED20, P642

[8] DESIGN AND DEVELOPMENT OF AN ULTRALOW-CAPACITANCE, HIGH-PERFORMANCE PEDESTAL TRANSITOR [J].

GHOSH, HN ;

ASHAR, KG ;

OBERAI, AS ;

DEWITT, D .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1971, 15 (06) :436-&

[9] ARSENIC EMITTER STRUCTURE FOR HIGH-PERFORMANCE SILICON TRANSISTORS [J].

GHOSH, HN ;

OBERAI, AS ;

CHANG, JJ ;

VORA, MB .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1971, 15 (06) :457-+

[10] A CHARGE CONTROL RELATION FOR BIPOLAR TRANSISTORS [J].

GUMMEL, HK .

BELL SYSTEM TECHNICAL JOURNAL, 1970, 49 (01) :115-+

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