AN ANALYTIC MODEL FOR MINORITY-CARRIER TRANSPORT IN HEAVILY DOPED REGIONS OF SILICON DEVICES

被引：60

作者：

FOSSUM, JG

SHIBIB, MA

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1981年 / 28卷 / 09期

关键词：

D O I：

10.1109/T-ED.1981.20478

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1018 / 1025

页数：8

共 22 条

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