MBE GROWTH AND MICROSTRUCTURAL EVALUATION OF ZN(S,SE)-BASED LEDS AND DIODE-LASERS

被引：9

作者：

GRILLO, DC

XIE, W

KOBAYASHI, M

GUNSHOR, RL

HUA, GC

OTSUKA, N

JEON, H

DING, J

NURMIKKO, AV

机构：

[1] PURDUE UNIV,SCH MAT ENGN,W LAFAYETTE,IN 47907

[2] BROWN UNIV,DIV ENGN,PROVIDENCE,RI 02912

[3] BROWN UNIV,DEPT PHYS,PROVIDENCE,RI 02912

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1993年 / 22卷 / 05期

关键词：

BLUE LASER EMISSION; MOLECULAR BEAM EPITAXY; ZN(S; SE)-BASED LIGHT EMITTING DIODES;

D O I：

10.1007/BF02661610

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The use of a nitrogen radio frequency plasma source together with an appropriate quantum well configuration have recently resulted in the successful realization of p-type ZnSe by molecular beam epitaxy. This has enabled a variety of pn heterojunction based devices to be built including the first semiconductor injection lasers operating in the blue/green portion of the spectrum first reported by 3M and the Brown/Purdue group. In this paper, we discuss two lattice matched multiple quantum well structures that produce laser emission in the blue and blue/green portion of the spectrum.

引用

页码：441 / 444

页数：4

共 19 条

[1]

CHENG H, 1988, J CRYST GROWTH, V95, P512

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