ULTRA-SHALLOW DEPTH PROFILING OF ARSENIC IMPLANTS IN SILICON BY HYDRIDE GENERATION-INDUCTIVELY COUPLED PLASMA-ATOMIC EMISSION-SPECTROMETRY

High resolution depth profiling of arsenic (As) implanted into silicon wafers by a chemical technique is described. Silicon wafers are precisely etched through repeated oxidation by hydrogen peroxide solution and dissolution of the oxide by hydrofluoric acid solution. The etched silicon thickness is determined by inductively-coupled plasma atomic emission spectrometry (ICP-AES). Arsenic concentration is determined by hydride generation ICP-AES (HG-ICP-AES) with prereduction using potassium iodide. The detection limit of As in a 4-inch silicon wafer is 2.4 x 10(18) atoms/cm(3). The etched silicon thickness is controlled to less than 4+/-2 atomic layers. Depth profiling of an ultra-shallow As diffusion layer with the proposed method shows good agreement with profiling using the four-probe method or secondary ion mass spectrometry.