A COMPARISON OF 3 TECHNIQUES FOR PROFILING ULTRA-SHALLOW P+-N JUNCTIONS - GREATER SILICON VALLEY IMPLANT USERS GROUP

被引：5

作者：

FELCH, SB

BRENNAN, R

CORCORAN, SF

WEBSTER, G

机构：

[1] SOLECON LABS,SAN JOSE,CA

[2] INTEL CORP,ALOHA,OR

[3] BIORAD,MT VIEW,CA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1993年 / 74卷 / 1-2期

关键词：

D O I：

10.1016/0168-583X(93)95035-4

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Secondary ion mass spectrometry, spreading resistance analysis, and differential Hall effect profiling are three commonly used techniques for measuring implant profiles. Unfortunately, all three have difficulties with ultra-shallow junctions. This study is a comparison of the three techniques on two wafers implanted with 5-keV BF2+ ions. The data from the three methods agree surprisingly well for both wafers, especially considering the stated inaccuracies of each technique. SIMS and spreading resistance analysis needed simple modifications to the procedures normally used for deeper junctions, but all three do a good job of profiling ultra-shallow p+-n junctions if these modifications are made.

引用

页码：156 / 159

页数：4

共 7 条

[1] EVALUATION OF POLYENCAPSULATION, OXYGEN LEAK, AND LOW-ENERGY ION-BOMBARDMENT IN THE REDUCTION OF SECONDARY ION MASS-SPECTROMETRY SURFACE ION YIELD TRANSIENTS [J].