SHALLOW JUNCTIONS FOR 0.1 MU-M NORMAL-TYPE METAL-OXIDE SEMICONDUCTOR-DEVICES

The n + /p junctions for 0.1-mu-m-gate n-type metal-oxide semiconductor must be no deeper than about 30 nm in order to preserve long-channel behavior in the enhancement mode metal-oxide semiconductor field-effect transistor. We report junctions formed by implantation of antimony or arsenic of depth 16-64 nm. They have been characterized by secondary ion mass spectroscopy, Rutherford backscattering spectroscopy lattice location studies, transmission electron microscopy, and electrical measurements.