AN ELECTROSTATIC-PROBE TECHNIQUE FOR RF PLASMA

[1] Boschi A., 1963, NUOVO CIMENTO 1955 1, V29, P487, DOI DOI 10.1007/BF02750367

[2] BRAITHWAITE NS, 1985, P INT S PLASMA CHEM, V2, P564

[3] Chapman B., 1980, GLOW DISCHARGE PROCE

[4] CHUNG PM, 1975, ELECTRIC PROBES STAT

[5] MICROWAVE SPECTROSCOPIC MEASUREMENT OF THE ELECTRON-DENSITY IN A PLANAR DISCHARGE - RELATION TO REACTIVE-ION ETCHING OF SILICON-OXIDE [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (09) : 4386 - 4390

[6] INVESTIGATION OF AN RF PLASMA WITH SYMMETRICAL AND ASYMMETRICAL ELECTROSTATIC PROBES [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (06) : 2639 - &

[7] NOTES ON EFFECT OF NOISE ON LANGMUIR PROBE CHARACTERISTICS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1962, 79 (509): : 535 - &

[8] KOHLER K, 1985, J APPL PHYS, V57, P59, DOI 10.1063/1.335396

[9] USE OF ELECTRIC PROBES IN SILANE RADIO-FREQUENCY DISCHARGES [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) : 4916 - 4927

[10] SABADIL H, 1985, 17 P INT C PHEN ION, P322

[1] Boschi A., 1963, NUOVO CIMENTO 1955 1, V29, P487, DOI DOI 10.1007/BF02750367

[2] BRAITHWAITE NS, 1985, P INT S PLASMA CHEM, V2, P564

[3] Chapman B., 1980, GLOW DISCHARGE PROCE

[4] CHUNG PM, 1975, ELECTRIC PROBES STAT

[5] MICROWAVE SPECTROSCOPIC MEASUREMENT OF THE ELECTRON-DENSITY IN A PLANAR DISCHARGE - RELATION TO REACTIVE-ION ETCHING OF SILICON-OXIDE [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (09) : 4386 - 4390

[6] INVESTIGATION OF AN RF PLASMA WITH SYMMETRICAL AND ASYMMETRICAL ELECTROSTATIC PROBES [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (06) : 2639 - &

[7] NOTES ON EFFECT OF NOISE ON LANGMUIR PROBE CHARACTERISTICS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1962, 79 (509): : 535 - &

[8] KOHLER K, 1985, J APPL PHYS, V57, P59, DOI 10.1063/1.335396

[9] USE OF ELECTRIC PROBES IN SILANE RADIO-FREQUENCY DISCHARGES [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) : 4916 - 4927

[10] SABADIL H, 1985, 17 P INT C PHEN ION, P322