ELECTRONIC-PROPERTIES OF THIN SIO2-FILMS DEPOSITED AT LOW-TEMPERATURES BY NEW ECR MICROWAVE PECVD PROCESS

[1] ELECTRICAL CHARACTERISTICS OF VERY THIN SIO2 DEPOSITED AT LOW SUBSTRATE TEMPERATURES [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (04) : 148 - 150

[2] CHARGE TRAPPING STUDIES IN SIO2 USING HIGH-CURRENT INJECTION FROM SI-RICH SIO2-FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) : 4830 - 4841

[3] HERAK TV, IN PRESS J APPL PHYS

[4] KERN W, 1970, RCA REV, V31, P187

[5] ELECTRON-CYCLOTRON-RESONANT MICROWAVE PLASMA SYSTEM FOR THIN-FILM DEPOSITION [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1986, 57 (03) : 493 - 496

[6] EFFECTS OF PROCESSING ON CHARACTERISTICS OF 10-15 NM THERMALLY GROWN SIO2-FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (06) : 1171 - 1176

[7] Robinson B., 1987, Plasma Processing and Synthesis of Materials. Symposium, P313

[1] ELECTRICAL CHARACTERISTICS OF VERY THIN SIO2 DEPOSITED AT LOW SUBSTRATE TEMPERATURES [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (04) : 148 - 150

[2] CHARGE TRAPPING STUDIES IN SIO2 USING HIGH-CURRENT INJECTION FROM SI-RICH SIO2-FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) : 4830 - 4841

[3] HERAK TV, IN PRESS J APPL PHYS

[4] KERN W, 1970, RCA REV, V31, P187

[5] ELECTRON-CYCLOTRON-RESONANT MICROWAVE PLASMA SYSTEM FOR THIN-FILM DEPOSITION [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1986, 57 (03) : 493 - 496

[6] EFFECTS OF PROCESSING ON CHARACTERISTICS OF 10-15 NM THERMALLY GROWN SIO2-FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (06) : 1171 - 1176

[7] Robinson B., 1987, Plasma Processing and Synthesis of Materials. Symposium, P313