METASTABLE DOPING BEHAVIOR IN ANTIMONY-IMPLANTED (100) SILICON

被引:37
作者
WILLIAMS, JS
SHORT, KT
机构
关键词
D O I
10.1063/1.330463
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:8663 / 8667
页数:5
相关论文
共 22 条
[1]   INCORPORATION OF IMPLANTED IN AND SB IN SILICON DURING AMORPHOUS LAYER REGROWTH [J].
BLOOD, P ;
BROWN, WL ;
MILLER, GL .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) :173-182
[2]   SUPERSATURATED SOLID-SOLUTIONS AFTER SOLID-PHASE EPITAXIAL-GROWTH IN BI-IMPLANTED SILICON [J].
CAMPISANO, SU ;
RIMINI, E ;
BAERI, P ;
FOTI, G .
APPLIED PHYSICS LETTERS, 1980, 37 (02) :170-172
[3]   STABILITY STUDY OF LASER IRRADIATION OF SILICON DIFFUSED WITH ARSENIC [J].
CHU, WK .
APPLIED PHYSICS LETTERS, 1980, 36 (04) :273-275
[4]  
FLETCHER J, 1981, I PHYS C SER, V60, P295
[5]  
GRAZIANI T, PHYS LETT
[6]  
HARRISON HB, 1982, LASER ELECTRON BEAM
[7]  
HILL C, 1982, LASER ANNEALING SEMI, pCH13
[8]   RUTHERFORD BACKSCATTERING STUDY OF CRYSTAL ORIENTATION DEPENDENT ANNEALING EFFECTS IN HIGH-DOSE ANTIMONY IMPLANTED SILICON [J].
JOSQUIN, WJMJ ;
TAMMINGA, Y .
APPLIED PHYSICS, 1978, 15 (01) :73-78
[9]   SOLID SOLUBILITY OF AS IN SI AS DETERMINED BY ION-IMPLANTATION AND CW LASER ANNEALING [J].
LIETOILA, A ;
GIBBONS, JF ;
MAGEE, TJ ;
PENG, J ;
HONG, JD .
APPLIED PHYSICS LETTERS, 1979, 35 (07) :532-534
[10]   METASTABLE AS-CONCENTRATIONS IN SI ACHIEVED BY ION-IMPLANTATION AND RAPID THERMAL ANNEALING [J].
LIETOILA, A ;
GOLD, RB ;
GIBBONS, JF ;
SIGMON, TW ;
SCOVELL, PD ;
YOUNG, JM .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (01) :230-232