METASTABLE DOPING BEHAVIOR IN ANTIMONY-IMPLANTED (100) SILICON

被引：37

作者：

WILLIAMS, JS

SHORT, KT

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 12期

关键词：

D O I：

10.1063/1.330463

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：8663 / 8667

页数：5

共 22 条

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