THE NATURE OF THE HYDROGEN PHOSPHORUS SYSTEM IN CRYSTALLINE SI

被引:5
作者
KHOO, GS
ONG, CK
机构
[1] Dept. of Phys., Nat. Univ. of Singapore, Kent Ridge
关键词
D O I
10.1088/0953-8984/3/33/011
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We have used a semi-empirical self-consistent method to investigate the motion of the H atom in the Si lattice in the presence of a P impurity. Our findings indicate that the P atom localizes the H atom, impeding its diffusion through the lattice. However, our most stable configuration has the H atom sandwiched in the interstitial space between the P and Si atoms compared with the model suggested by Johnson, Herring and Chadi in 1986 with the H atom at the AB site of a Si nearest neighbour of a substitutional P. Our results also agree qualitatively with the general observations regarding the H-P system from experimental data.
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页码:6321 / 6327
页数:7
相关论文
共 24 条
[1]  
[Anonymous], 1970, APPROXIMATE MOL ORBI
[2]   MICROSCOPIC MECHANISM OF HYDROGEN PASSIVATION OF ACCEPTOR SHALLOW LEVELS IN SILICON [J].
ASSALI, LVC ;
LEITE, JR .
PHYSICAL REVIEW LETTERS, 1985, 55 (09) :980-982
[3]  
BAILAR JC, 1973, COMPREHENSIVE INORGA, V1, P1381
[4]   DONOR-HYDROGEN COMPLEXES IN PASSIVATED SILICON [J].
BERGMAN, K ;
STAVOLA, M ;
PEARTON, SJ ;
LOPATA, J .
PHYSICAL REVIEW B, 1988, 37 (05) :2770-2773
[5]   THEORY OF HYDROGEN PASSIVATION OF SHALLOW-LEVEL DOPANTS IN CRYSTALLINE SILICON [J].
CHANG, KJ ;
CHADI, DJ .
PHYSICAL REVIEW LETTERS, 1988, 60 (14) :1422-1425
[6]   EVIDENCE FOR COMPLEXES OF HYDROGEN WITH DEEP-LEVEL DEFECTS IN BULK III-V MATERIALS [J].
CLERJAUD, B ;
COTE, D ;
NAUD, C .
PHYSICAL REVIEW LETTERS, 1987, 58 (17) :1755-1757
[7]   HYDROGEN-ACCEPTOR PAIRS IN SILICON - PAIRING EFFECT ON THE HYDROGEN VIBRATIONAL FREQUENCY [J].
DELEO, GG ;
FOWLER, WB .
PHYSICAL REVIEW B, 1985, 31 (10) :6861-6864
[8]   STRUCTURE AND PROPERTIES OF HYDROGEN-IMPURITY PAIRS IN ELEMENTAL SEMICONDUCTORS [J].
DENTENEER, PJH ;
VAN DE WALLE, CG ;
PANTELIDES, ST .
PHYSICAL REVIEW LETTERS, 1989, 62 (16) :1884-1887
[9]   MICROSCOPIC STRUCTURE OF THE HYDROGEN-PHOSPHORUS COMPLEX IN CRYSTALLINE SILICON [J].
DENTENEER, PJH ;
VAN DE WALLE, CG ;
PANTELIDES, ST .
PHYSICAL REVIEW B, 1990, 41 (06) :3885-3888
[10]   LARGE UNIT-CELL SEMI-EMPIRICAL MOLECULAR-ORBITAL APPROACH TO THE PROPERTIES OF SOLIDS .2. COVALENT MATERIALS - DIAMOND AND SILICON [J].
HARKER, AH ;
LARKINS, FP .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (13) :2497-2508