THE NATURE OF THE HYDROGEN PHOSPHORUS SYSTEM IN CRYSTALLINE SI

被引:5
作者
KHOO, GS
ONG, CK
机构
[1] Dept. of Phys., Nat. Univ. of Singapore, Kent Ridge
关键词
D O I
10.1088/0953-8984/3/33/011
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We have used a semi-empirical self-consistent method to investigate the motion of the H atom in the Si lattice in the presence of a P impurity. Our findings indicate that the P atom localizes the H atom, impeding its diffusion through the lattice. However, our most stable configuration has the H atom sandwiched in the interstitial space between the P and Si atoms compared with the model suggested by Johnson, Herring and Chadi in 1986 with the H atom at the AB site of a Si nearest neighbour of a substitutional P. Our results also agree qualitatively with the general observations regarding the H-P system from experimental data.
引用
收藏
页码:6321 / 6327
页数:7
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共 24 条
[21]   HYDROGEN LOCALIZATION NEAR BORON IN SILICON [J].
PANKOVE, JI ;
ZANZUCCHI, PJ ;
MAGEE, CW ;
LUCOVSKY, G .
APPLIED PHYSICS LETTERS, 1985, 46 (04) :421-423
[22]   EFFECT OF HYDROGEN ON UNDOPED AND LIGHTLY SI-DOPED MOLECULAR-BEAM EPITAXIAL GAAS-LAYERS [J].
PAO, YC ;
LIU, D ;
LEE, WS ;
HARRIS, JS .
APPLIED PHYSICS LETTERS, 1986, 48 (19) :1291-1293
[23]   STRUCTURE OF HYDROGEN CENTER IN D-IMPLANTED SI [J].
PICRAUX, ST ;
VOOK, FL .
PHYSICAL REVIEW B, 1978, 18 (05) :2066-2077
[24]   DEACTIVATION OF THE BORON ACCEPTOR IN SILICON BY HYDROGEN [J].
SAH, CT ;
SUN, JY ;
TZOU, JJ .
APPLIED PHYSICS LETTERS, 1983, 43 (02) :204-206