EFFECT OF HYDROGEN ON UNDOPED AND LIGHTLY SI-DOPED MOLECULAR-BEAM EPITAXIAL GAAS-LAYERS

被引：24

作者：

PAO, YC ^{[1
]}

LIU, D ^{[1
]}

LEE, WS ^{[1
]}

HARRIS, JS ^{[1
]}

机构：

[1] STANFORD UNIV,SOLID STATE LAB,STANFORD,CA 94305

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 19期

关键词：

D O I：

10.1063/1.96956

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1291 / 1293

页数：3

相关论文

共 10 条

[1] DEEP STATES AND SURFACE PROCESSES IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY
BLOOD, P
HARRIS, JJ
JOYCE, BA
NEAVE, JH
[J]. JOURNAL DE PHYSIQUE, 1982, 43 (NC-5): : 351 - 355
[2] ON THE USE OF ASH3 IN THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS
CALAWA, AR
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (09) : 701 - 703
[3] CALAWA AR, 1978, APPL PHYS LETT, V33, P1021
[4] USE OF MOLECULAR-BEAM EPITAXY IN RESEARCH AND DEVELOPMENT OF SELECTED HIGH-SPEED COMPOUND SEMICONDUCTOR-DEVICES
EASTMAN, LF
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 131 - 134
[5] STUDY OF ELECTRON TRAPS IN N-GAAS GROWN BY MOLECULAR-BEAM EPITAXY
LANG, DV
CHO, AY
GOSSARD, AC
ILEGEMS, M
WIEGMANN, W
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) : 2558 - 2564
[6] HIGH-PURITY GAAS AND CR-DOPED GAAS EPITAXIAL LAYERS BY MBE
MORKOC, H
CHO, AY
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (10) : 6413 - 6416
[7] PLOOG K, 1982, ANN REV MATER SCI, V12, P133
[8] EFFECT OF AS4/GA FLUX RATIO ON ELECTRICAL-PROPERTIES OF NID GAAS-LAYERS GROWN BY MBE
SALETES, A
MASSIES, J
NEU, G
CONTOUR, JP
[J]. ELECTRONICS LETTERS, 1984, 20 (21) : 872 - 874
[9] SKROMME BJ, 1985 EL MAT C BOULD
[10] ELECTRON MOBILITY IN HIGH-PURITY GAAS
WOLFE, CM
STILLMAN, GE
LINDLEY, WT
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) : 3088 - &