COMPARISON OF 2D MEMORY SEU TRANSPORT SIMULATION WITH EXPERIMENTS

被引：23

作者：

FU, JS ^{[1
]}

WEAVER, HT ^{[1
]}

KOGA, R ^{[1
]}

KOLASINSKI, WA ^{[1
]}

机构：

[1] AEROSPACE CORP,LOS ANGELES,CA 90009

来源：

关键词：

D O I：

10.1109/TNS.1985.4334083

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：4145 / 4149

页数：5

共 7 条

[1] AUGER COEFFICIENTS FOR HIGHLY DOPED AND HIGHLY EXCITED SILICON [J].

DZIEWIOR, J ;

SCHMID, W .

[2]

Fu J. S., 1985, 1985 International Symposium on VLSI Technology, Systems and Applications. Proceedings of Technical Papers, P245

FU, JS ;

AXNESS, CL ;

WEAVER, HT .

[4] MEMORY SEU SIMULATIONS USING 2-D TRANSPORT CALCULATIONS [J].

FU, JS ;

AXNESS, CL ;

WEAVER, HT .

HSIEH, CM ;

MURLEY, PC ;

OBRIEN, RR .

ELECTRON DEVICE LETTERS, 1981, 2 (04) :103-105

[6]

MOCK MS, 1981, NUMERICAL ANAL SEMIC

[7]

Momose H., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P706