QUANTITATIVE DISTRIBUTION ANALYSIS OF B, AS AND SB IN THE LAYER SYSTEM SIO2/SI WITH SIMS - ELIMINATION OF MATRIX AND CHARGING EFFECTS

被引：23

作者：

STINGEDER, G

机构：

来源：

FRESENIUS ZEITSCHRIFT FUR ANALYTISCHE CHEMIE | 1987年 / 327卷 / 02期

关键词：

D O I：

10.1007/BF00469821

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

引用

页码：225 / 232

页数：8

共 24 条

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[8] THE SURFACE-ANALYSIS OF INSULATORS BY SIMS - CHARGE NEUTRALIZATION AND STABILIZATION OF THE SURFACE-POTENTIAL [J].

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