学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
QUANTITATIVE DISTRIBUTION ANALYSIS OF B, AS AND SB IN THE LAYER SYSTEM SIO2/SI WITH SIMS - ELIMINATION OF MATRIX AND CHARGING EFFECTS
被引:23
作者
:
STINGEDER, G
论文数:
0
引用数:
0
h-index:
0
STINGEDER, G
机构
:
来源
:
FRESENIUS ZEITSCHRIFT FUR ANALYTISCHE CHEMIE
|
1987年
/ 327卷
/ 02期
关键词
:
D O I
:
10.1007/BF00469821
中图分类号
:
O65 [分析化学];
学科分类号
:
070302 ;
081704 ;
摘要
:
引用
收藏
页码:225 / 232
页数:8
相关论文
共 24 条
[21]
CHARGING OF INSULATORS BY ION-BOMBARDMENT AND ITS MINIMIZATION FOR SECONDARY ION MASS-SPECTROMETRY (SIMS) MEASUREMENTS
[J].
WERNER, HW
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
WERNER, HW
;
MORGAN, AE
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
MORGAN, AE
.
JOURNAL OF APPLIED PHYSICS,
1976,
47
(04)
:1232
-1242
[22]
WERNER HW, 1974, ADV MASS SPECTROM, V6, P673
[23]
HIGH-SENSITIVITY DEPTH PROFILING OF ARSENIC AND PHOSPHORUS IN SILICON BY MEANS OF SIMS
[J].
WITTMAACK, K
论文数:
0
引用数:
0
h-index:
0
机构:
GESELL STRAHLEN & UMWELT FORSCH MBH,PHYS TECH ABT,D-8042 NEUHERBERG,FED REP GER
GESELL STRAHLEN & UMWELT FORSCH MBH,PHYS TECH ABT,D-8042 NEUHERBERG,FED REP GER
WITTMAACK, K
.
APPLIED PHYSICS LETTERS,
1976,
29
(09)
:552
-554
[24]
PRIMARY-ION CHARGE COMPENSATION IN SIMS ANALYSIS OF INSULATORS
[J].
WITTMAACK, K
论文数:
0
引用数:
0
h-index:
0
机构:
Gesellschaft für Strahlen-und Umweltforschung MbH, Physikalisch-Technische Abteilung
WITTMAACK, K
.
JOURNAL OF APPLIED PHYSICS,
1979,
50
(01)
:493
-497
←
1
2
3
→
共 24 条
[21]
CHARGING OF INSULATORS BY ION-BOMBARDMENT AND ITS MINIMIZATION FOR SECONDARY ION MASS-SPECTROMETRY (SIMS) MEASUREMENTS
[J].
WERNER, HW
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
WERNER, HW
;
MORGAN, AE
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
MORGAN, AE
.
JOURNAL OF APPLIED PHYSICS,
1976,
47
(04)
:1232
-1242
[22]
WERNER HW, 1974, ADV MASS SPECTROM, V6, P673
[23]
HIGH-SENSITIVITY DEPTH PROFILING OF ARSENIC AND PHOSPHORUS IN SILICON BY MEANS OF SIMS
[J].
WITTMAACK, K
论文数:
0
引用数:
0
h-index:
0
机构:
GESELL STRAHLEN & UMWELT FORSCH MBH,PHYS TECH ABT,D-8042 NEUHERBERG,FED REP GER
GESELL STRAHLEN & UMWELT FORSCH MBH,PHYS TECH ABT,D-8042 NEUHERBERG,FED REP GER
WITTMAACK, K
.
APPLIED PHYSICS LETTERS,
1976,
29
(09)
:552
-554
[24]
PRIMARY-ION CHARGE COMPENSATION IN SIMS ANALYSIS OF INSULATORS
[J].
WITTMAACK, K
论文数:
0
引用数:
0
h-index:
0
机构:
Gesellschaft für Strahlen-und Umweltforschung MbH, Physikalisch-Technische Abteilung
WITTMAACK, K
.
JOURNAL OF APPLIED PHYSICS,
1979,
50
(01)
:493
-497
←
1
2
3
→