HIGH-SENSITIVITY DEPTH PROFILING OF ARSENIC AND PHOSPHORUS IN SILICON BY MEANS OF SIMS

被引：54

作者：

WITTMAACK, K ^{[1
]}

机构：

[1] GESELL STRAHLEN & UMWELT FORSCH MBH,PHYS TECH ABT,D-8042 NEUHERBERG,FED REP GER

来源：

APPLIED PHYSICS LETTERS | 1976年 / 29卷 / 09期

关键词：

D O I：

10.1063/1.89181

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：552 / 554

页数：3

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