ION-IMPLANTATION DAMAGE AND ANNEALING IN INAS, GASB, AND GAP

被引：66

作者：

PEARTON, SJ

VONNEIDA, AR

BROWN, JM

SHORT, KT

OSTER, LJ

CHAKRABARTI, UK

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 02期

关键词：

D O I：

10.1063/1.341952

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：629 / 636

页数：8

共 24 条

[1]

ALLENGRE J, 1977, I PHYS C SER, V46, P379

[2]

APPLETON BR, 1984, MATER RES SOC S P, V27, P195

[3] THE APPLICATION OF SECONDARY ION MASS-SPECTROMETRY TO SURFACE-ANALYSIS OF SEMICONDUCTOR SUBSTRATES AND DEVICES [J].

BROWN, A ;

VANDENBERG, JA ;

VICKERMAN, JC .

SURFACE AND INTERFACE ANALYSIS, 1986, 9 (1-6) :309-317

[4]

CHISTEL LA, 1981, J APPL PHYS, V52, P5080

[5] TRANSIENT THERMAL ANNEALING IN GAAS [J].

DAVIES, DE .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR) :387-394

[6] VERY EFFICIENT VOID FORMATION IN ION-IMPLANTED INSB [J].

DESTEFANIS, GL ;

GAILLIARD, JP .

APPLIED PHYSICS LETTERS, 1980, 36 (01) :40-42

[7] MONOLAYER SURFACE DOPING OF GAAS FROM A PLATED ZINC SOURCE [J].

DOBKIN, DM ;

GIBBONS, JF .

APPLIED PHYSICS LETTERS, 1984, 44 (09) :884-886

[8] THE ELECTRICAL CHARACTERISTICS OF ION-IMPLANTED COMPOUND SEMICONDUCTORS [J].

DONNELLY, JP .

NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR) :553-571

[9] ION-IMPLANTATION IN III-V COMPOUNDS [J].

EISEN, FH .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 47 (1-4) :99-115

[10] THE PREPARATION AND FLOATING ZONE PROCESSING OF GALLIUM PHOSPHIDE [J].

FROSCH, CJ ;

DERICK, L .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (03) :251-257

← 1 2 3 →