EFFECT OF OPTICAL POWER ON THE RESONANCE FREQUENCY OF OPTICALLY POWERED SILICON MICRORESONATORS

The transverse vibrations of silicon microresonators can be generated and detected by optical means. However, their resonance frequencies can be affected by variations in optical intensity, which may produce temperature changes in the resonator. In this paper we describe a study of these effects in boron-doped silicon microresonators by experimental investigation and theoretical analysis. Experimental measurements on such prestrained resonators show a drop in resonance frequency of 1% when the optical intensity increases from 50-mu-W to 2.4 mW, equivalent to -4ppm/mu-W. Theoretical calculations are shown to achieve good agreement with the experimental results.