EPR OF NEW PLATINUM-RELATED COMPLEXES IN SILICON .1. DEFECTS OF SYMMETRY C1H FORMED AT INTERMEDIATE TEMPERATURES

The variety of Pt-related complex defects in silicon is enlarged by EPR detection of a new group of defects, each of them containing one Pt ion. They are formed by different annealing procedures, including a step at intermediate temperatures. Two of the new complexes exhibit an EPR spectroscopic peculiarity: Though the angular dependences evidence an apparent monoclinic symmetry, two of the line groups, typical for this symmetry, coincide for any angle of rotation. The condition for this behaviour is discussed.