STRAIN-MODULATED ELECTRON-SPIN-RESONANCE STUDY OF PT- IN SILICON

被引：23

作者：

HENNING, JCM

EGELMEERS, ECJ

机构：

来源：

PHYSICAL REVIEW B | 1983年 / 27卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.27.4002

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4002 / 4012

页数：11

共 31 条

[1]

BADALIAN YG, 1971, 7TH P INT C AC BUD, V4, P225

[2] PHOTOIONIZATION CROSS-SECTIONS IN PLATINUM-DOPED SILICON [J].

BRAUN, S ;

GRIMMEISS, HG ;

SPANN, K .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (09) :3883-3887

[3]

Brotherton Sarah, COMMUNICATION

[4] ELECTRON AND HOLE CAPTURE AT AU AND PT CENTERS IN SILICON [J].

BROTHERTON, SD ;

LOWTHER, JE .

PHYSICAL REVIEW LETTERS, 1980, 44 (09) :606-609

[5] ELECTRICAL-PROPERTIES OF PLATINUM IN SILICON [J].

BROTHERTON, SD ;

BRADLEY, P ;

BICKNELL, J .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3396-3403

[6] PROPERTIES OF GOLD IN SILICON [J].

BULLIS, WM .

SOLID-STATE ELECTRONICS, 1966, 9 (02) :143-&

[7]

CADY WG, 1964, PIEZOELECTRICITY, pCH4

[8] ULTRASONIC MODULATED ELECTRON RESONANCE [J].

COLLINS, MA ;

DEVINE, SD ;

ROBINSON, WH ;

HOFFMAN, RA .

JOURNAL OF MAGNETIC RESONANCE, 1972, 6 (03) :376-&

[9] ULTRASONICALLY MODULATED ELECTRON RESONANCE [J].

COLLINS, MA ;

DEVINE, SD ;

HOFFMAN, RA ;

ROBINSON, WH .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1971, 4 (08) :L116-&

[10] DEFECTS IN IRRADIATED SILICON .2. INFRARED ABSSORPTION OF SI-A CENTER [J].

CORBETT, JW ;

WATKINS, GD ;

CHRENKO, RM ;

MCDONALD, RS .

PHYSICAL REVIEW, 1961, 121 (04) :1015-&

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