PHOTOIONIZATION CROSS-SECTIONS IN PLATINUM-DOPED SILICON

被引：32

作者：

BRAUN, S

GRIMMEISS, HG

SPANN, K

机构：

[1] DEPT SOLID STATE PHYS,S-22007 LUND 7,SWEDEN

[2] UNIV FRANKFURT,INST PHYS,D-6000 FRANKFURT,FED REP GER

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 09期

关键词：

D O I：

10.1063/1.324259

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3883 / 3887

页数：5

共 25 条

[1]

AKHMEDOVA MM, 1976, SOV PHYS SEMICOND+, V9, P861

[2]

AZIMOV SA, 1974, SOV PHYS SEMICOND+, V8, P758

[3] ISMPLE METHOD FOR DETERMINING PHOTO-IONIZATION CROSS SECTIONS [J].

BJORKLUND, G ;

GRIMMEISS, HG .

PHYSICA STATUS SOLIDI, 1970, 42 (01) :K1-+

[4] OPTICAL-PROPERTIES OF GOLD ACCEPTOR AND DONOR LEVELS IN SILICON [J].

BRAUN, S ;

GRIMMEISS, HG .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (06) :2658-2665

[5]

BRAUN S, UNPUBLISHED

[6] ELECTRICAL PROPERTIES OF SILICON DOPED WITH PLATINUM [J].

CARCHANO, H ;

JUND, C .

SOLID-STATE ELECTRONICS, 1970, 13 (01) :83-&

[7]

CHARLOT JJ, 1970, CR ACAD SCI B PHYS, V270, P1488

[8]

Conti M., 1971, Alta Frequenza, V40, P544

[9] TEMPERATURE-DEPENDENCE OF GOLD ACCEPTOR ENERGY-LEVEL IN SILICON [J].

ENGSTROM, O ;

GRIMMEISS, HG .

APPLIED PHYSICS LETTERS, 1974, 25 (07) :413-415

[10] THERMAL ACTIVATION-ENERGY OF GOLD-ACCEPTOR LEVEL IN SILICON [J].

ENGSTROM, O ;

GRIMMEISS, HG .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (02) :831-837

← 1 2 3 →