A HEATED WINDOW ASSEMBLY FOR A MOLECULAR-BEAM EPITAXY SYSTEM

被引：9

作者：

MARS, DE

MILLER, JN

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 04期

关键词：

D O I：

10.1116/1.584626

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：682 / 683

页数：2

共 4 条

[1] OBSERVATION OF PHOTOELECTRON OSCILLATIONS DURING GROWTH OF GAAS
ECKSTEIN, JN
WEBB, C
WENG, SL
BERTNESS, KA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02): : 736 - 739
[2] MOLECULAR-BEAM EPITAXY OF GALLIUM-ARSENIDE USING DIRECT RADIATIVE SUBSTRATE HEATING
HELLMAN, ES
PITNER, PM
HARWIT, A
LIU, D
YOFFE, GW
HARRIS, JS
CAFFEE, B
HIERL, T
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (02): : 574 - 577
[3] AN INDIUM-FREE MOUNT FOR GAAS SUBSTRATE HEATING DURING MOLECULAR-BEAM EPITAXIAL-GROWTH
MARS, DE
MILLER, JN
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (02): : 571 - 573
[4] REPRODUCIBLE TEMPERATURE-MEASUREMENT OF GAAS SUBSTRATES DURING MOLECULAR-BEAM EPITAXIAL-GROWTH
WRIGHT, SL
MARKS, RF
WANG, WI
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (02): : 505 - 506