HIGH-PERFORMANCE INGAASP/INP 1-3MUM LASER STRUCTURES WITH BOTH FACETS ETCHED

被引：14

作者：

SAITO, H

NOGUCHI, Y

NAGAI, H

机构：

[1] NTT, Atsugi, Jpn, NTT, Atsugi, Jpn

来源：

ELECTRONICS LETTERS | 1986年 / 22卷 / 22期

关键词：

AGING OF MATERIALS - ETCHING - MICROSCOPIC EXAMINATION - Scanning Electron Microscopy - SEMICONDUCTING GALLIUM COMPOUNDS - SEMICONDUCTING INDIUM COMPOUNDS;

D O I：

10.1049/el:19860792

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InGaAsP/InP laser structures with both facets etched are successfully fabricated by angled reactive ion etching (RIE) utilizing a TiO//2 mask and Cl//2-Ar gas. Typical cw threshold current ranges from 20 to 30 mA at 25 degree C, and light output power from one facet exceeds 25 mw. Results of the aging test at 50 degree C and 100 mA show no serious degradation for 3200 h.

引用

页码：1157 / 1158

页数：2

共 5 条

[1] LOW THRESHOLD GAAS/GAALAS BH LASERS WITH ION-BEAM-ETCHED MIRRORS
BOUADMA, N
RIOU, J
KAMPFER, A
[J]. ELECTRONICS LETTERS, 1985, 21 (13) : 566 - 568
[2] DIRECTIONAL REACTIVE-ION-ETCHING OF INP WITH CL-2 CONTAINING GASES
COLDREN, LA
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (02): : 225 - 230
[3] INFLUENCE OF STRUCTURE PARAMETERS ON LASING CHARACTERISTICS OF SEMICONDUCTOR-LASERS
MATSUMOTO, N
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (02) : 321 - 332
[4] LOW-THRESHOLD INGAASP/INP 1.3-MUM DOUBLY BURIED-HETEROSTRUCTURE LASERS WITH A REACTIVE-ION-ETCHED FACET
SAITO, H
NOGUCHI, Y
NAGAI, H
[J]. ELECTRONICS LETTERS, 1986, 22 (01) : 36 - 38
[5] CW OPERATION OF 1.5-MU-M INGAASP/INP BH LASERS WITH A REACTIVE-ION-ETCHED FACET
SAITO, H
NOGUCHI, Y
NAGAI, H
[J]. ELECTRONICS LETTERS, 1985, 21 (17) : 748 - 749

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