HETEROEPITAXIAL GROWTH OF CD1-XMNXTE ON GAAS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：25

作者：

NOUHI, A

STIRN, RJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 26期

关键词：

D O I：

10.1063/1.98927

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2251 / 2253

页数：3

共 22 条

[1] STIMULATED-EMISSION FROM A CD1-XMNXTE-CDTE MULTILAYER STRUCTURE [J].

BICKNELL, RN ;

GILESTAYLOR, NC ;

SCHETZINA, JF ;

ANDERSON, NG ;

LAIDIG, WD .

APPLIED PHYSICS LETTERS, 1985, 46 (03) :238-240

[2] CD1-XMNX TE-CDTE MULTILAYERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

BICKNELL, RN ;

YANKA, RW ;

GILESTAYLOR, NC ;

BLANKS, DK ;

BUCKLAND, EL ;

SCHETZINA, JF .

APPLIED PHYSICS LETTERS, 1984, 45 (01) :92-94

[3] DEFECT STRUCTURE OF EPITAXIAL CDTE LAYERS GROWN ON (100) AND (111)B GAAS AND ON (111)B CDTE BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

BROWN, PD ;

HAILS, JE ;

RUSSELL, GJ ;

WOODS, J .

APPLIED PHYSICS LETTERS, 1987, 50 (17) :1144-1145

[4] RECENT PROGRESS ON LADA GROWTH OF HGCDTE AND CDTE EPITAXIAL LAYERS [J].

CHEUNG, JT ;

MAGEE, T .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1983, 1 (03) :1604-1607

[5] MODEL FOR HETEROEPITAXIAL GROWTH OF CDTE ON (100) ORIENTED GAAS SUBSTRATE [J].

COHENSOLAL, G ;

BAILLY, F ;

BARBE, M .

APPLIED PHYSICS LETTERS, 1986, 49 (22) :1519-1521

[6] HIGH-QUALITY EPITAXIAL-FILMS OF CDTE ON SAPPHIRE [J].

COLE, HS ;

WOODBURY, HH ;

SCHETZINA, JF .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) :3166-3168

[7] ELECTRICAL, OPTICAL, AND MAGNETIC-PROPERTIES OF HG1-XMNXTE [J].

FURDYNA, JK .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01) :220-228

[8] GIANT EXCITON FARADAY-ROTATION IN CD1-XMNXTE MIXED-CRYSTALS [J].

GAJ, JA ;

GATAZKA, RR ;

NAWROCKI, M .

SOLID STATE COMMUNICATIONS, 1978, 25 (03) :193-195

[9]

GESTNER ER, 1985, J CRYST GROWTH, V72, P462

[10] GROWTH OF CDTE ON GAAS BY ORGANOMETALLIC VAPOR-PHASE HETEROEPITAXY [J].

GHANDHI, SK ;

TASKAR, NR ;

BHAT, IB .

APPLIED PHYSICS LETTERS, 1985, 47 (07) :742-745

← 1 2 3 →