HYSTERETIC JOSEPHSON-JUNCTION BEHAVIOR AND PHASE DIFFUSION IN BA1-XKXBIO3 FILMS

被引:8
作者
MARTIN, S
HELLMAN, ES
KUSSMAUL, A
HARTFORD, EH
机构
[1] AT and T Bell Laboratories, Murray Hill
来源
PHYSICAL REVIEW B | 1993年 / 48卷 / 09期
关键词
D O I
10.1103/PhysRevB.48.6626
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In Ba1-xKxBiO3 multidomain films grown on LaAlO3 substrates we find evidence for hysteretic Josephson-junction behavior. The junctions exhibit critical currents of a few muA and a finite zero-bias resistance. The critical current and zero-bias resistance depend on temperature, and amplitude of external rf irradiation. Qualitative features of the measured I-V curves can be accounted for by a simple model based on junctions in series coupled by a shunt capacitance. Estimates of the junction parameters are obtained by quantitative comparison of the data with an extended model based on classical phase diffusion.
引用
收藏
页码:6626 / 6631
页数:6
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