PREPARATION AND OPTICAL-PROPERTIES OF SEMICONDUCTOR MICROCRYSTAL-DOPED SIO2 GLASS THIN-FILMS BY RF-SPUTTERING

被引：9

作者：

NASU, H

MATSUOKA, J

KAMIYA, K

机构：

[1] Department of Chemistry for Materials, Faculty of Engineering, Mie University, Tsu, 514

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1994年 / 178卷

关键词：

D O I：

10.1016/0022-3093(94)90278-X

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Semiconductor microcrystals were successfully doped in SiO2 glass thin films by an rf-sputtering. Various types of semiconductor can be doped in the films and a quantum size effect can be seen in them. For the theoretical interpretation of the effect, the influence of the matrix and the electron transition process should be taken into account. chi((3)) of the CdSe microcrystal-doped SiO2 glass film is in the neighborhood of 10(-8) esu, comparable to that of the commercial bulk filter glasses.

引用

页码：148 / 154

页数：7

共 15 条

[1]

EFROS AL, 1982, SOV PHYS SEMICOND+, V16, P772

[2]

FUKUMI K, 1991, ADV NONLINEAR OPTICA, P254

[3]

Haken H, 1956, NUOVO CIMENTO, V10, P1230

[4] GROWTH-PROCESS OF CDSE MICROCRYSTALS IN CDSE-DOPED SIO2 GLASS THIN-FILMS [J].