EPITAXIAL DEPOSITION OF SILICON ON QUARTZ

被引:6
作者
JOYCE, BA
BICKNELL, RW
CHARIG, JM
STIRLAND, DJ
机构
关键词
D O I
10.1016/0038-1098(63)90424-1
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
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页码:107 / 108
页数:2
相关论文
共 5 条
[1]  
BASSETT GA, 1959, P INT C STRUCT PROP, P11
[2]   EPITAXIAL GROWTH OF SILICON BY HYDROGEN REDUCTION OF SIHCL3 ONTO SILICON SUBSTRATES [J].
CHARIG, JM ;
JOYCE, BA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (10) :957-962
[3]   GROWTH MECHANISM AND DEFECT STRUCTURES IN EPITAXIAL SILICON [J].
CHARIG, JM ;
BICKNELL, RW ;
STIRLAND, DJ ;
JOYCE, BA .
PHILOSOPHICAL MAGAZINE, 1962, 7 (83) :1847-&
[4]  
JOYCE BA, UNPUB J ELECTROCHEM
[5]  
PASHLEY DW, UNPUB PHIL MAG