AU-MG IMPROVED OHMIC CONTACTS TO P-GAAS

[1] OHMIC CONTACTS FOR GAAS DEVICES [J]. SOLID-STATE ELECTRONICS, 1967, 10 (12) : 1213 - +

[2] OHMIC CONTACTS TO EPITAXIAL PGAAS [J]. SOLID-STATE ELECTRONICS, 1971, 14 (06) : 515 - &

[3] HOLLAND L, 1958, VACUUM DEPOSITION TH, P541

[4] BACK SURFACE GETTERING AND CR OUT-DIFFUSION IN VPE GAAS-LAYERS [J]. APPLIED PHYSICS LETTERS, 1979, 35 (03) : 277 - 279

[5] POALA CR, 1970, SOLID STATE ELECTRON, V13, P1189

[6] METALLURGICAL AND ELECTRICAL PROPERTIES OF ALLOYED NI-AU-GE FILMS ON N-TYPE GAAS [J]. SOLID-STATE ELECTRONICS, 1975, 18 (04) : 331 - &

[7] SINTERED OHMIC CONTACTS TO N-TYPE AND P-TYPE GAAS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (05) : 218 - 224

[1] OHMIC CONTACTS FOR GAAS DEVICES [J]. SOLID-STATE ELECTRONICS, 1967, 10 (12) : 1213 - +

[2] OHMIC CONTACTS TO EPITAXIAL PGAAS [J]. SOLID-STATE ELECTRONICS, 1971, 14 (06) : 515 - &

[3] HOLLAND L, 1958, VACUUM DEPOSITION TH, P541

[4] BACK SURFACE GETTERING AND CR OUT-DIFFUSION IN VPE GAAS-LAYERS [J]. APPLIED PHYSICS LETTERS, 1979, 35 (03) : 277 - 279

[5] POALA CR, 1970, SOLID STATE ELECTRON, V13, P1189

[6] METALLURGICAL AND ELECTRICAL PROPERTIES OF ALLOYED NI-AU-GE FILMS ON N-TYPE GAAS [J]. SOLID-STATE ELECTRONICS, 1975, 18 (04) : 331 - &

[7] SINTERED OHMIC CONTACTS TO N-TYPE AND P-TYPE GAAS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (05) : 218 - 224